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  ? semiconductor components industries, llc, 2016 march, 2016 ? rev. 11 1 publication order number: pzta42t1/d pzta42t1g high voltage transistor surface mount npn silicon features ? pzta42t1g is complement to pzta92t1g ? s prefix for automotive and other applications requiring unique site and control change requirements; aec?q101 qualified and ppap capable ? these devices are pb?free, halogen free/bfr free and are rohs compliant maximum ratings (t c = 25 c unless otherwise noted) rating symbol value unit collector?emitter voltage (open base) v ceo 300 vdc collector?base voltage (open emitter) v cbo 300 vdc emitter?base voltage (open collector) v ebo 6.0 vdc collector current (dc) i c 500 madc total power dissipation @ t a = 25 c (note 1) p d 1.5 w storage temperature range t stg ?65 to +150 c junction temperature t j 150 c stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. device mounted on a fr?4 gl ass epoxy printed circuit board 1.575 in x 1.575 in x 0.0625 in; mounting pa d for the collector lead = 0.93 sq in. thermal characteristics characteristic symbol max unit thermal resistance, junction?to?ambient (note 2) r  ja 83.3 c/w 2. device mounted on a fr?4 gl ass epoxy printed circuit board 1.575 in x 1.575 in x 0.0625 in; mounting pa d for the collector lead = 0.93 sq in. sot?223 case 318e style 1 marking diagram collector 2, 4 base 1 emitter 3 sot?223 package npn silicon high voltage transistor surface mount 1 ayw p1d   p1d = specific device code a = assembly location y = year w = work week  = pb?free package (note: microdot may be in either location) www. onsemi.com ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specification s brochure, brd8011/d. device package shipping ? ordering information pzta42t1g sot?223 (pb?free) 1,000 / tape & ree l spzta42t1g sot?223 (pb?free) 1,000 / tape & ree l 1 2 3 4
pzta42t1g www. onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristics symbol min max unit off characteristics collector-emitter breakdown voltage (note 3) (i c = 1.0 madc, i b = 0) v (br)ceo 300 ? vdc collector-base breakdown voltage (i c = 100  adc, i e = 0) v (br)cbo 300 ? vdc emitter-base breakdown voltage (i e = 100  adc, i c = 0) v (br)ebo 6.0 ? vdc collector-base cutoff current (v cb = 200 vdc, i e = 0) i cbo ? 0.1  adc emitter-base cutoff current (v be = 6.0 vdc, i c = 0) i ebo ? 0.1  adc on characteristics dc current gain (i c = 1.0 madc, v ce = 10 vdc) (i c = 10 madc, v ce = 10 vdc) (i c = 30 madc, v ce = 10 vdc) h fe 25 40 40 ? ? ? ? dynamic characteristics current-gain ? bandwidth product (i c = 10 madc, v ce = 20 vdc, f = 100 mhz) f t 50 ? mhz feedback capacitance (v cb = 20 vdc, i e = 0, f = 1.0 mhz) c re ? 3.0 pf collector-emitter saturation voltage (i c = 20 madc, i b = 2.0 madc) v ce(sat) ? 0.5 vdc base-emitter saturation voltage (i c = 20 madc, i b = 2.0 madc) v be(sat) ? 0.9 vdc 3. pulse test conditions, t p = 300  s,  0.02. figure 1. dc current gain i c , collector current (ma) 120 0.1 1.0 10 100 80 60 0 h fe , dc current gain t j = +125 c 25 c -55 c v ce = 10 vdc 100 20 40
pzta42t1g www. onsemi.com 3 c, capacitance (pf) v r , reverse voltage (v) 0.1 100 0.1 10 1.0 10 1000 c eb @ 1mhz figure 2. capacitance i c , collector current (ma) v, voltage (v) 1.4 0.0 1.2 1.0 0.8 0.6 0.4 0.2 100 10 0.1 1.0 100 1.0 c cb @ 1mhz v be(on) @ 25 c, v ce = 10 v v ce(sat) @ 25 c, i c /i b = 10 v be(sat) @ 25 c, i c /i b = 10 v ce(sat) @ 125 c, i c /i b = 10 v ce(sat) @ -55 c, i c /i b = 10 v be(sat) @ 125 c, i c /i b = 10 v be(sat) @ -55 c, i c /i b = 10 v be(on) @ 125 c, v ce = 10 v v be(on) @ -55 c, v ce = 10 v figure 3. ?on? voltages figure 4. current gain bandwidth product figure 5. safe operating area v ce , collector?emitter voltage (v) 100 0 10 0.1 0.01 0.1 1 i c , collector current (a) 10 ms 1.0 s 100 100 i c , collector current (ma) f , current?gain ? bandwidth (mhz) t 100 1 0.1 10 100 10 10 1 1 ms 100 ms 1  s, 10  s, 100  s
pzta42t1g www. onsemi.com 4 package dimensions sot?223 (to?261) case 318e?04 issue n *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* 1.5 0.059  mm inches  scale 6:1 3.8 0.15 2.0 0.079 6.3 0.248 2.3 0.091 2.3 0.091 2.0 0.079 style 1: pin 1. base 2. collector 3. emitter 4. collector a1 b1 d e b e e1 4 123 0.08 (0003) a l1 c notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: inch. h e dim a min nom max min millimeters 1.50 1.63 1.75 0.060 inches a1 0.02 0.06 0.10 0.001 b 0.60 0.75 0.89 0.024 b1 2.90 3.06 3.20 0.115 c 0.24 0.29 0.35 0.009 d 6.30 6.50 6.70 0.249 e 3.30 3.50 3.70 0.130 e 2.20 2.30 2.40 0.087 0.85 0.94 1.05 0.033 0.064 0.068 0.002 0.004 0.030 0.035 0.121 0.126 0.012 0.014 0.256 0.263 0.138 0.145 0.091 0.094 0.037 0.041 nom max l1 1.50 1.75 2.00 0.060 6.70 7.00 7.30 0.264 0.069 0.078 0.276 0.287 h e ? ? e1 0 1 0 0 1 0   l l 0.20 ??? ??? 0.008 ??? ??? on semiconductor and the are registered trademarks of semiconductor components industries, llc (scillc) or its subsidia ries in the united states and/or other countries. scillc owns the rights to a number of pa tents, trademarks, copyrights, trade secret s, and other intellectual property. a listin g of scillc?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent?marking.pdf. scillc reserves the right to make changes without further notice to any product s herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any part icular purpose, nor does sci llc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typi cal? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating param eters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgic al implant into the body, or other applications intended to s upport or sustain life, or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer s hall indemnify and hold scillc and its officers , employees, subsidiaries, affiliates, and dist ributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufac ture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 pzta42t1/d literature fulfillment : literature distribution center for on semiconductor 19521 e. 32nd pkwy, aurora, colorado 80011 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative


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